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0.5W 2.7V SOD123 zener  diode

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0.5W 2.7V SOD123 zener diode

Unit Price: FOB   |  Get Latest Price

Model No.: BZT52C2V7AT

Min. Order: 10 Bag/Bags

Payment Type: T/T

Transportation: Ocean

Productivity: 5KK/M

Packaging: T/R

Delivery Time: 20 Days

Place of Origin: china

Brand: agertech

Supply Ability: formal

Mr.tony Administrative

Business type:Manufacturer

Tel:86-0769-81785058

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Product Description

 BZT52C2V7AT is a 0.5W 2.7V Zener diode in  SOD123 package. The Zener diode is a surface contact type crystal diode made of silicon material, which is a semiconductor device having a high resistance until the critical reverse breakdown voltage. When the voltage regulator is reverse-punched, within a certain current range (or within a certain power loss range), the terminal voltage is almost constant, showing a voltage regulation characteristic. Because of this characteristic, the voltage regulator is mainly used as Used by a voltage regulator or voltage reference component. 


Absolute Maximum Ratings And Characteristics (Ta = 25 °C)

Parameter

Symbol

Value

Unit

Power Dissipation

PD

500

mW

Forward Voltage at I10 mA

VF

0.9

V

Typical thermal resistance juncting to ambient (1)

RθJA

305

°C/W

Operating and Storage Temperature Range

Tj, Tstg

-55 ~ +150

°C




Characteristics at Ta = 25°C


 

Type

 

 

Marking

Zener Voltage Range (2)

Maximum Zener (3) Impedance

Reverse Current (2)

VZT(at IZT)

IZT

ZZT@IZT

IZT

ZZK@IZK

IZK

IR

@VR

Min(V)

Nom(V)

Max(V)

(mA)

(Ω)

(mA)

(Ω)

(mA)

μA

V

BZT52C2V0AT

WY

1.91

2.0

2.09

5

100

5

600

1

150

1.0

BZT52C2V4AT

WX

2.2

2.4

2.6

5

100

5

600

1

50

1.0

BZT52C2V7AT

W1

2.5

2.7

2.9

5

100

5

600

1

20

1.0

BZT52C3V0AT

W2

2.8

3.0

3.2

5

95

5

600

1

10

1.0

BZT52C3V3AT

W3

3.1

3.3

3.5

5

95

5

600

1

5.0

1.0

BZT52C3V6AT

W4

3.4

3.6

3.8

5

90

5

600

1

5.0

1.0

BZT52C3V9AT

W5

3.7

3.9

4.1

5

90

5

600

1

3.0

1.0

BZT52C4V3AT

W6

4

4.3

4.6

5

90

5

600

1

3.0

1.0

BZT52C4V7AT

W7

4.4

4.7

5

5

80

5

500

1

3.0

2.0

BZT52C5V1AT

W8

4.8

5.1

5.4

5

60

5

480

1

2.0

2.0

BZT52C5V6AT

W9

5.2

5.6

6

5

40

5

400

1

1.0

2.0

BZT52C6V2AT

WA

5.8

6.2

6.6

5

10

5

150

1

3.0

4.0

BZT52C6V8AT

WB

6.4

6.8

7.2

5

15

5

80

1

2.0

4.0

BZT52C7V5AT

WC

7

7.5

7.9

5

15

5

80

1

1.0

5.0

BZT52C8V2AT

WD

7.7

8.2

8.7

5

15

5

80

1

0.7

5.0

BZT52C9V1AT

WE

8.5

9.1

9.6

5

15

5

100

1

0.5

6.0

BZT52C10AT

WF

9.4

10

10.6

5

20

5

150

1

0.2

7.0

BZT52C11AT

WG

10.4

11

11.6

5

20

5

150

1

0.1

8.0

BZT52C12AT

WH

11.4

12

12.7

5

25

5

150

1

0.1

8.0

BZT52C13AT

WI

12.4

13

14.1

5

30

5

170

1

0.1

8.0

BZT52C15AT

WJ

13.8

15

15.6

5

30

5

200

1

0.1

10.5

BZT52C16AT

WK

15.3

16

17.1

5

40

5

200

1

0.1

11.2

BZT52C18AT

WL

16.8

18

19.1

5

45

5

225

1

0.1

12.6

BZT52C20AT

WM

18.8

20

21.2

5

55

5

225

1

0.1

14.0

BZT52C22AT

WN

20.8

22

23.3

5

55

5

250

1

0.1

15.4

BZT52C24AT

WO

22.8

24

25.6

5

70

5

250

1

0.1

16.8

BZT52C27AT

WP

25.1

27

28.9

2

80

2

300

0.5

0.1

18.9

BZT52C30AT

WQ

28

30

32

2

80

2

300

0.5

0.1

21.0

BZT52C33AT

WR

31

33

35

2

80

2

325

0.5

0.1

23.1

BZT52C36AT

WS

34

36

38

2

90

2

350

0.5

0.1

25.2

BZT52C39AT

WT

37

39

41

2

130

2

350

0.5

0.1

27.3

BZT52C43AT

6A

40

43

46

2.5

130

2

500

1

2

33

BZT52C47AT

6B

44

47

50

2.5

150

2

500

1

2

36

BZT52C51AT

6C

48

51

54

2.5

180

2

500

1

1

37

BZT52C56AT

6D

52

56

60

2.5

180

2

500

1

1

43

BZT52C62AT

6E

58

62

66

2.5

200

2

500

1

0.2

47

BZT52C68AT

6F

64

68

72

2.5

250

2

500

1

0.2

52

BZT52C75AT

6H

70

75

79

2.5

300

2

500

1

0.2

57

NOTES:(1)f=1KHz
(2)Short duration test pulse used to minimize self-heating effect.
(3)VZT  is tested with pulses 20ms.


Zener Diode 2.7V

http://www.agertechcomponents.com
Sino Talent International Holdings Ltd. Now, its core business is integrated circuit, field-effect, diode and transistor`s research that the mainly researching products are Power MOSFET, TVS, LDO and other power supply IC products. Sino Talent International Holdings Ltd. core competitiveness of the corporation is [independent research and development". It established a R&D center in Shanghai so that it can offer excellent technical solutions towards entire electronic industry. The corporation promote technological innovation and product upgrading in the industry and build up a own brand―AGRETECH.Our team is aim to offer cost-effective products and professional technology service. The continental head corporation is Beijing Sizhong Electronic. The subsidiaries(Hangzhou Xiantuo Electronic,Dongguan Agretech,Nanjing Yanke,Hunan Agretech and Shanghai Agretech Electronic) work as brand sales and technical services for [SAST" [HMS" [". Company's location is integrating suppliers in electronic components and provides good product and technical services for customers comprehensively.

Basic Information

  • Company Name:

    Dongguan Agertech Technology Co., Ltd.

  • Representative:

    Ai Liangdong

  • Business Type:

    Manufacturer

  • Product/Service:

    Electronic Components , Zener Diodes , Low Dropout Regulator , P Channel Power Mosfet , N Channel Power Mosfet , Small Signal Transistor

  • No. of Total Employees:

    51~100

  • Capital (Million US $):

    5,000,000RMB

  • Year Established:

    2009

  • Certificate:

    Manufacturer

  • Company Address:

    Room 5N, 23/F Wah Fat Industrial Building Rear Block 10-14 Kung Yip Street  Kwai Chung  N. T  Hong K

Factory Information

  • No. of Production Lines:

    4

  • No. of R&D Staff:

    21 -30 People

  • No. of QC Staff:

    21 -30 People

  • OEM Services Provided:

    yes

  • Factory Size (Sq.meters):

    10,000-30,000 square meters

  • Factory Location:

    No.23, Jinyuanxin Road, Shilong-keng, Liaobu Town, Dongguan City, Guangdong Province, China

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